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International Journal of Innovation and Applied Studies
ISSN: 2028-9324     CODEN: IJIABO     OCLC Number: 828807274     ZDB-ID: 2703985-7
 
 
Saturday 14 December 2019

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OPTICAL AND ELECTRICAL PROPERTIES OF ZnTe THIN FILMS USING ELECTRODEPOSITION TECHNIQUE


Volume 12, Issue 2, July 2015, Pages 369–373

 OPTICAL AND ELECTRICAL PROPERTIES OF ZnTe THIN FILMS USING ELECTRODEPOSITION TECHNIQUE

IMOSOBOMEH LUCKY IKHIOYA1

1 Department of Physics and Industrial Physics, Nnamdi Azikiwe University, Awka, Anambra State, Nigeria

Original language: English

Received 7 April 2015

Copyright © 2015 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract


Zinc Telluride (ZnTe) thin films have been successfully deposited on a glass substrate Fluorine Tin oxide (FTO) by electrodeposition technique. The absorbance was measured using M501 UV-visible spectrophotometer in the wavelength range of 200-900nm. Zinc Telluride (ZnTe) thin films were investigated at room temperature. Optical absorption study showed that ZnTe films were of indirect band gap type semiconductor with band gap energy of 2.2-2.4eV.

Author Keywords: Optical, Electrical, Thin Film, Fluorine Tin oxide (FTO), Electrodeposition.


How to Cite this Article


IMOSOBOMEH LUCKY IKHIOYA, “OPTICAL AND ELECTRICAL PROPERTIES OF ZnTe THIN FILMS USING ELECTRODEPOSITION TECHNIQUE,” International Journal of Innovation and Applied Studies, vol. 12, no. 2, pp. 369–373, July 2015.