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International Journal of Innovation and Applied Studies
ISSN: 2028-9324     CODEN: IJIABO     OCLC Number: 828807274     ZDB-ID: 2703985-7
 
 
Wednesday 14 November 2018

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CONTRIBUTION TO THE MODELING OF A 2DEG CURRENT A HIGH ELECTRON MOBILITY TRANSISTOR BASED ON GAN/ALGAN HETEROSTRUCTURES


Volume 6, Issue 3, July 2014, Pages 369–375

 CONTRIBUTION TO THE MODELING OF A 2DEG CURRENT A HIGH ELECTRON MOBILITY TRANSISTOR BASED ON GAN/ALGAN HETEROSTRUCTURES

Oussama Zeggai1, Ammaria Ould-Abbas2, and Hichem Zeggai3

1 Research Unit of Materials and Renewable Energies (URMER), University Abou Bakr Belkaïd, B.P. 119, Tlemcen, Algeria
2 Research Unit of Materials and Renewable Energies (URMER), University Abou Bakr Belkaïd, B.P. 119, Tlemcen, Algeria
3 Research Unit of Materials and Renewable Energies (URMER), University Abou Bakr Belkaïd, B.P. 119, Tlemcen, Algeria

Original language: English

Received 17 May 2014

Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract


The development of systems using microwaves for military telecommunications and consumer, requires discrete components and power that can operate at high frequencies. It is efficient components for operating systems such as high electron mobility transistor (HEMT).
The potential of transistors HEMTs based heterostructure AlGaN / GaN high interest to the international scientific community and are certainly the most currently studied worldwide. They have emerged as attractive candidates for applications in high voltage, high frequency to microwave power. By the spontaneous and piezoelectric polarization, they have the facility to produce a two-dimensional electron gas (2DEG) at the interface with a high concentration without doping intensional. The market for power components based on this material is booming for many applications.
In this article we studied some properties of nitride materials existing in the structure for a better functioning of the component, it is necessary to have a physical simulation model for describing the heterojunction AlGaN / GaN, and the fundamental principles of electrical operation a HEMT transistor. In this model, this electron mobility 2DEG depending on the gate voltage in the transistor channel and the Al concentration.


Author Keywords: SEMICONDUCTOR, ALGAN, GAN, HETEROJUNCTION, HEMT, 2DEG.


How to Cite this Article


Oussama Zeggai, Ammaria Ould-Abbas, and Hichem Zeggai, “CONTRIBUTION TO THE MODELING OF A 2DEG CURRENT A HIGH ELECTRON MOBILITY TRANSISTOR BASED ON GAN/ALGAN HETEROSTRUCTURES,” International Journal of Innovation and Applied Studies, vol. 6, no. 3, pp. 369–375, July 2014.